The Electronic Structure of the Cs/n-GaN(0001) Nano-Interface

Journal Article · Thu Mar 15 04:00:00 EDT 2018 · Technical Physics Letters

DOI:https://doi.org/10.1134/S106378501803015X· OSTI ID:22786516

Benemanskaya, G. V.; Marchenko, D. E. ^[1]; Timoshnev, S. N. ^[2]

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1. Elektronenspeicherring BESSY II, Helmholtz-Zentrum Berlin für Materialen und Energie (Germany)
2. Russian Academy of Sciences, St. Petersburg National Research Academic University (Russian Federation)

Electronic structures of the n-GaN(0001) surface and Cs/n-GaN(0001) interface with submonolayer Cs coverages were studied for the first time in situ by the photoelectron spectroscopy (PES) method. The spectra of photoemission from the valence band, surface electron states, and core levels (Ga 3d, Cs 4d, Cs 5p) under synchrotron excitation were measured in a range of photon energies within 50–150 eV. Evolution of the spectrum of surface states near the valence-band maximum was revealed by PES during the adsorption of Cs atoms. A metallic character of the Cs/n-GaN(0001) nano-interface is demonstrated.

• OSTI ID: 22786516
• Journal Information: Technical Physics Letters, Journal Name: Technical Physics Letters Journal Issue: 3 Vol. 44; ISSN 1063-7850
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ADSORPTION
ATOMS
CESIUM
ELECTRONIC STRUCTURE
EXCITATION
GALLIUM NITRIDES
INTERFACES
N-TYPE CONDUCTORS
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SPECTRA
SURFACES