Bulk and surface electronic structure of GaN measured using angle resolved photoemission, soft x-ray emission and soft x-ray absorption
- Boston Univ., MA (United States)
- Uppsala Univ. (Sweden). Dept. of Physics
The electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. The authors have measured the bulk valence and conduction band partial density of states by recording Ga L and N K- x-ray emission and absorption spectra. They compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules the authors can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. They report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, they tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.
- Sponsoring Organization:
- National Science Foundation, Washington, DC (United States); Swedish Natural Research Council (Sweden); Goeran Gustafsson Foundation; USDOE, Washington, DC (United States)
- OSTI ID:
- 585819
- Report Number(s):
- CONF-961202-; ISBN 1-55899-353-3; TRN: IM9810%%49
- Resource Relation:
- Conference: 1996 Fall meeting of the Materials Research Society (MRS), Boston, MA (United States), 2-6 Dec 1996; Other Information: PBD: 1997; Related Information: Is Part Of III-V nitrides; Ponce, F.A. [ed.] [Xerox Palo Alto Research Center, CA (United States)]; Moustakas, T.D. [ed.] [Boston Univ., MA (United States)]; Akasaki, I. [ed.] [Meijo Univ., Nagoya (Japan)]; Monemar, B.A. [ed.] [Linkoeping Univ. (Sweden)]; PB: 1278 p.; Materials Research Society symposium proceedings, Volume 449
- Country of Publication:
- United States
- Language:
- English
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