Field emission properties of diamond films of different qualities

Journal Article · Wed Oct 01 04:00:00 EDT 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120024· OSTI ID:543746

Fox, N A; Wang, W N; Davis, T J; Steeds, J W ^[1]; May, P W ^[2]

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1. H. H. Wills Physics Laboratory, Bristol University, Bristol BS8 1TL (United Kingdom)
2. School of Chemistry, University of Bristol, Canto Close, Bristol, BS8 1TS (United Kingdom)

Field emission properties of diamond films were studied by macroscopic I{endash}V measurement. A lower turn-on field and a higher emission current were observed for diamond films produced by higher methane concentration, or with higher density of defects, introduced by ion implantation. However, diamond films of poorer quality experience a severe reliability problem. Cold implantation followed by rapid thermal or laser annealing produced diamond emitters with a turn-on field as low as 5 V/{mu}m and the desired reliability. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 543746
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 16 Vol. 71; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHEMICAL VAPOR DEPOSITION
DIAMONDS
ELECTRON EMISSION
FIELD EMISSION
ION IMPLANTATION
THIN FILMS