Influence of surface treatment and dopant concentration on field emission characteristics of boron-doped diamond thin films

Journal Article · Sat Nov 01 04:00:00 EST 1997 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.120142· OSTI ID:544771

Nagao, M; Kondo, T; Gotoh, Y; Tsuji, H; Ishikawa, J ^[1]; Miyata, K; Kobashi, K ^[2]

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1. Department of Electronic Science and Engineering, Kyoto University, Yoshida-honmachi, Sakyo-ku, Kyoto 606-01 (Japan)
2. Kobe Steel, Ltd., Electronics and Information Technology Laboratory, 5-5, 1-chome, Takatsuka-dai, Nishi-ku, Kobe 651-22 (Japan)

Field emission characteristics of B-doped diamond thin films terminated with oxygen and hydrogen were investigated. The diamond thin films were prepared by microwave plasma chemical vapor deposition. The dependence of emission characteristics on the surface treatment and on the B concentration was investigated. The turn-on voltage required to extract a current of 0.1 nA depended on these preparation parameters. The emitters with lower B concentration emitted electrons at a lower turn-on voltage, and the H-terminated emitters had a lower turn-on voltage than O-terminated emitters. The analysis of the slope and the intercept of Fowler{endash}Nordheim plot revealed that the dependence of turn-on voltage on the surface treatment is due to the difference of emission barrier height, and that the dependence on B concentration is due not to the emission barrier height but to the surface morphology. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 544771
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 19 Vol. 71; ISSN 0003-6951; ISSN APPLAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
BORON ADDITIONS
DIAMONDS
ELECTRON EMISSION
FIELD EMISSION
FOWLER-NORDHEIM THEORY
HYDROGEN
OXYGEN
SURFACE TREATMENTS
THIN FILMS