Field emission properties of diode devices based on amorphic diamond-Si heterojunctions

Journal Article · Sat Feb 01 04:00:00 EST 1997 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.363915· OSTI ID:450243

Wang, W N; Fox, N A; Richardson, D; Lynch, G M; Steeds, J W ^[1]

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1. H. H. Wills Physics Laboratory, Bristol University, Royal Fort, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)

Microscopic and macroscopic field emission properties of amorphic diamond films on n- and p-type silicon substrates were studied by combined scanning tunneling microscopy/spectroscopy and integral field emission I{endash}V measurements. Microscopic scanning tunneling spectroscopy showed that amorphic diamond films on n-Si have lower threshold voltage and higher emission current than amorphic diamond films on p-Si. The observed rectification characteristics suggest that amorphic diamond on n-Si is an ideal forward-biased p-n junction cold cathode emitter; however, there is no significant difference between these two structures by integral field emission I{endash}V measurements. Conversion of the smooth amorphic diamond film into porous sp{sup 3}/sp{sup 2} composites with sharp features under electric fields higher than 50 V/{mu}m, followed by preferred electron emission from the porous composite sites of high transconductance, was believed to be the cause. {copyright} {ital 1997 American Institute of Physics.}

• OSTI ID: 450243
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 81; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
AMORPHOUS STATE
CATHODES
DIAMONDS
ELECTRON EMISSION
FIELD EMISSION
FILMS
HETEROJUNCTIONS
SEMICONDUCTOR DIODES
SILICON