Field emission properties of diode devices based on amorphic diamond-Si heterojunctions
- H. H. Wills Physics Laboratory, Bristol University, Royal Fort, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)
Microscopic and macroscopic field emission properties of amorphic diamond films on n- and p-type silicon substrates were studied by combined scanning tunneling microscopy/spectroscopy and integral field emission I{endash}V measurements. Microscopic scanning tunneling spectroscopy showed that amorphic diamond films on n-Si have lower threshold voltage and higher emission current than amorphic diamond films on p-Si. The observed rectification characteristics suggest that amorphic diamond on n-Si is an ideal forward-biased p-n junction cold cathode emitter; however, there is no significant difference between these two structures by integral field emission I{endash}V measurements. Conversion of the smooth amorphic diamond film into porous sp{sup 3}/sp{sup 2} composites with sharp features under electric fields higher than 50 V/{mu}m, followed by preferred electron emission from the porous composite sites of high transconductance, was believed to be the cause. {copyright} {ital 1997 American Institute of Physics.}
- OSTI ID:
- 450243
- Journal Information:
- Journal of Applied Physics, Vol. 81, Issue 3; Other Information: PBD: Feb 1997
- Country of Publication:
- United States
- Language:
- English
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