Fabrication and characterization of diamond field emitter diode with built-in anode
Conference
·
OSTI ID:230012
- Michigan State Univ., East Lansing, MI (United States)
Diamond field emitter diodes with built-in anode are designed, fabricated and characterized. Boron-doped p-type polycrystalline diamond film grown by hot filament chemical vapor deposition (HFCVD) is used as an emitter material. A four mask fabrication process is employed using diamond film technology compatible with Si integrated circuit (IC) processing. Photoresist is used as a sacrificial layer to produce a vacuum gap between anode and cathode. Current versus voltage (I-V) data, measured at 10{sup -6} Torr, shows Fowler-Nordheim (F-N) field emission behavior. The current density measured at 0.2MV/cm is approximately 0.5A/cm{sup 2}.
- OSTI ID:
- 230012
- Report Number(s):
- CONF-950840--
- Country of Publication:
- United States
- Language:
- English
Similar Records
Crystalline and amorphous diamond coatings on silicon field emitters
Field emission from diamond coated molybdenum field emitters
Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique
Conference
·
Sat Dec 30 23:00:00 EST 1995
·
OSTI ID:230014
Field emission from diamond coated molybdenum field emitters
Journal Article
·
Wed May 01 00:00:00 EDT 1996
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:288174
Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique
Journal Article
·
Fri Feb 28 23:00:00 EST 1997
· Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
·
OSTI ID:477543