Emission characteristic of diamond-tip field emitter arrays fabricated by transfer mold technique

Journal Article · Fri Feb 28 23:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589608· OSTI ID:477543

Kim, S; Ju, B K; Lee, Y H ^[1]; Park, B S; Baik, Y ^[2]; Lim, S ^[3]; Oh, M H ^[1]

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1. Division of Electronics and Information Technology, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul (Korea)
2. Division of Ceramics, Korea Institute of Science and Technology, P.O. Box 131, Cheongryang, Seoul (Korea)
3. Department of Electronics Engineering, Dankook University, Number 29 Anseo-dong, Cheonan (Korea)

Wedge-shaped diamond-tip field emitter arrays were fabricated and characterized. The tip radius of the diamond emitter fabricated by using a silicon mold was about 300 {Angstrom}. The maximum current density of 800 {mu}A/cm{sup 2} and the threshold voltage of 600 V were obtained from the diamond-tip field emitter array, which was a better electrical characteristic than that of a flat diamond film. The effects of vacuum pressure upon emission characteristics were investigated. The emission characteristic of the diamond-tip field emitter array was not varied over a wide range of vacuum pressure relatively to the flat diamond film. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 477543
• Report Number(s): CONF-9607192--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 15; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
CATHODES
CURRENT DENSITY
DIAMONDS
ELECTRON EMISSION
FABRICATION
FIELD EMISSION
MICROELECTRONICS
PRESSURE DEPENDENCE