Emission characterization of diamond-coated Si field emission arrays

Journal Article · Fri Feb 28 23:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589595· OSTI ID:477541

Zhirnov, V V; Givargizov, E I ^[1]; Kandidov, A V; Seleznev, B V ^[2]; Alimova, A N ^[1]

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1. Institute of Crystallography, 117333 Moscow, (Russia), CIS
2. Institute of Nuclear Physics, Moscow State University, 119899 Moscow, (Russia), CIS

Large-area arrays of Si tips (10{sup 5}{endash}10{sup 6} tips in an array) with diamond coating were tested in pulse and dc modes. The arrays demonstrated uniform emission, reproducible I{endash}V plots, and low emission threshold. The maximum current achieved with diamond-coated Si arrays was 80 mA in pulse mode. Emission characteristics were found to be superior to the uncoated Si tip arrays or diamond-coated flat cathodes. {copyright} {ital 1997 American Vacuum Society.}

• OSTI ID: 477541
• Report Number(s): CONF-9607192--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 2 Vol. 15; ISSN JVTBD9; ISSN 0734-211X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
66 PHYSICS
CARBON
CATHODES
COATINGS
DIAMONDS
ELECTRON EMISSION
FIELD EMISSION
SILICON
THIN FILMS
WHISKERS