Solar cell structure incorporating a novel single crystal silicon material
Patent
·
OSTI ID:5426669
A novel hydrogen rich single crystal silicon material having a band gap energy greater than 1.1 eV can be fabricated by forming an amorphous region of graded crystallinity in a body of single crystalline silicon and thereafter contacting the region with atomic hydrogen followed by pulsed laser annealing at a sufficient power and for a sufficient duration to recrystallize the region into single crystal silicon without out-gassing the hydrogen. The new material can be used to fabricate semiconductor devices such as single crystal silicon solar cells with surface window regions having a greater band gap energy than that of single crystal silicon without hydrogen.
- Assignee:
- RCA Corporation
- Patent Number(s):
- US 4392011
- OSTI ID:
- 5426669
- Resource Relation:
- Patent File Date: Filed date 8 Oct 1981; Other Information: PAT-APPL-309695
- Country of Publication:
- United States
- Language:
- English
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Solar cell structure incorporating a novel single crystal silicon material
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OSTI ID:5426669
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Related Subjects
14 SOLAR ENERGY
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
ANNEALING
BAND THEORY
ENERGY GAP
HYDROGEN
MONOCRYSTALS
RECRYSTALLIZATION
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion
SILICON SOLAR CELLS
FABRICATION
AMORPHOUS STATE
ANNEALING
BAND THEORY
ENERGY GAP
HYDROGEN
MONOCRYSTALS
RECRYSTALLIZATION
CRYSTALS
DIRECT ENERGY CONVERTERS
ELEMENTS
EQUIPMENT
HEAT TREATMENTS
NONMETALS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SOLAR CELLS
SOLAR EQUIPMENT
140501* - Solar Energy Conversion- Photovoltaic Conversion