The growth and characterization of epitaxial solar cells on re-solidified metallurgical grade silicon
Journal Article
·
· RCA Rev.; (United States)
OSTI ID:5426660
This paper describes the results obtained at RCA Laboratories in the development of a solar-cell process based on using epitaxial thin films grown on a substrate made from low-cost metallurgical-grade (MG) silicon. The properties of the starting MG feedstock are described and related to the observed problem of SiC particle formation during ingot solidification. Data obtained on the size, spacial distribution in ingots, and the subsequent effect of particles on epitaxial solar-cell performance are presented. Methods for significantly reducing the SiC particle density were developed and are discussed along with the characteristics of solar cells made in particle-free material. The rotary-disc reactor used for epitaxial growth of solar-cell structures and its scale-up to large area and high throughput is described.
- Research Organization:
- RCA Laboratories, Princeton, NJ 08540
- OSTI ID:
- 5426660
- Journal Information:
- RCA Rev.; (United States), Journal Name: RCA Rev.; (United States) Vol. 44:1; ISSN RCARC
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin-film epitaxial solar cells on substrates made from MG silicon by the HEM process
Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications
Epitaxial silicon growth for solar cells. Quarterly report No. 3, April 1--June 30, 1978
Conference
·
Wed Sep 01 00:00:00 EDT 1982
· Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
·
OSTI ID:5495132
Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications
Technical Report
·
Tue Nov 30 23:00:00 EST 1982
·
OSTI ID:5513580
Epitaxial silicon growth for solar cells. Quarterly report No. 3, April 1--June 30, 1978
Technical Report
·
Sat Jul 01 00:00:00 EDT 1978
·
OSTI ID:6051333