Single crystal growth of upgraded metallurgical silicon by HEM for photovoltaic applications
Technical Report
·
OSTI ID:5513580
Commercially available metallurgical grade (MG) silicon has high B and P content which is not reduced significantly by directional solidification. By choosing high purity raw materials for an experimental Submerged Electrode Arc Furnace, most of the impurities are reduced to 10 ppmw. Directional solidification of upgraded metallurgical grade (UMG) silicon by the Heat Exchanger Method (HEM) has produced 16 cm x 16 cm cross section ingots with nearly single crystal structure. The main problem encountered during directional solidification was SiC impurities dispersed through the structure. Solar cells fabricated from UMG silicon that was directionally solidified twice by HEM have shown up to 12.33% (am1) conversion efficiency.
- Research Organization:
- Crystal Systems, Inc., Salem, MA (USA)
- OSTI ID:
- 5513580
- Report Number(s):
- N-8325033
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BORON
CARBIDES
CARBON COMPOUNDS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
HEAT EXCHANGER METHOD
HEAT EXCHANGERS
IMPURITIES
MONOCRYSTALS
NONMETALS
PHASE TRANSFORMATIONS
PHOSPHORUS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLIDIFICATION
TWINNING
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
BORON
CARBIDES
CARBON COMPOUNDS
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTALS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EQUIPMENT
HEAT EXCHANGER METHOD
HEAT EXCHANGERS
IMPURITIES
MONOCRYSTALS
NONMETALS
PHASE TRANSFORMATIONS
PHOSPHORUS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLIDIFICATION
TWINNING