Processing of MG silicon for photovoltaic applications

Conference · Sun May 01 04:00:00 EDT 1983 · Proc. - Electrochem. Soc.; (United States)

OSTI ID:6547318

Khattak, C P; Schmid, F

This paper describes in situ refinements of as-received, commercially available MG silicon by the Heat Exchanger Method (HEM). Samples of MG silicon from six different sources were directionally solidified and nearly single crystal structure was achieved in 15 cm square ingots. The effect of vacuum, slagging, argon blowing through the melt and double solidification on refinement of impurities was studied. The simultaneous incorporation of vacuum, slagging, moist argon blowing through the melt and a directional solidification reduced the impurities to less than 1 ppm levels. These procedures were also effective in reducing the B and P contents.

• Research Organization: Crystal Systems Inc., Salem, MA
• OSTI ID: 6547318
• Report Number(s): CONF-8305161-
• Conference Information: Journal Name: Proc. - Electrochem. Soc.; (United States) Journal Volume: 83-11
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ARGON
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
CRYSTAL STRUCTURE
CRYSTAL-PHASE TRANSFORMATIONS
ELEMENTS
FLUIDS
GASES
HEAT EXCHANGER METHOD
IMPURITIES
MELTING
NONMETALS
PHASE TRANSFORMATIONS
PURIFICATION
RARE GASES
REMOVAL
SEMIMETALS
SILICON
SOLIDIFICATION