Thin-film epitaxial solar cells on substrates made from MG silicon by the HEM process

Conference · Wed Sep 01 04:00:00 EDT 1982 · Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)

OSTI ID:5495132

Khattak, C P; D'Aiello, R V; Robinson, P H; Schmid, F

This paper describes progress made in applying the Heat Exchanger Method (HEM) in the direct solidification of commercially available metallurgical grade (MG) silicon for the fabrication of substrates suitable for the epitaxial growth of solar-cell structures. Attention is focused on the problem of SiC particle formation, its relationship to the starting MG feedstock, the characteristics of particle distribution in the ingots, and the effects on potential solar-cell yield. Methods are described for significantly reducing particles including proper selection of commercial MG feedstock, modifications and in-situ purifications added to the basic HEM process. After the introduction of these changes, quantitative estimates of ingot utilization and epitaxial solar-cell performance are given. Best solar-cell results were 12% on 4 cm/sup 2/, and 10.7% on 10 cm/sup 2/ area cells.

• Research Organization: Crystal Systems, Inc., Salem, MA
• OSTI ID: 5495132
• Report Number(s): CONF-820906-
• Conference Information: Journal Name: Conf. Rec. IEEE Photovoltaic Spec. Conf.; (United States)
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CARBIDES
CARBON COMPOUNDS
CONTROL
CRYSTAL GROWTH
CRYSTAL GROWTH METHODS
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELEMENTS
EPITAXY
EQUIPMENT
FABRICATION
FILMS
HEAT EXCHANGER METHOD
IMPURITIES
METALLURGICAL EFFECTS
MODIFICATIONS
PERFORMANCE
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PURIFICATION
QUALITY CONTROL
QUANTUM EFFICIENCY
SEMIMETALS
SILICON
SILICON CARBIDES
SILICON COMPOUNDS
SILICON SOLAR CELLS
SOLAR CELLS
SOLAR EQUIPMENT
SOLIDIFICATION
SUBSTRATES
THIN FILMS