Surface reconstruction in layer-by-layer sputtering of Si(111)
Journal Article
·
· Physical Review, B: Condensed Matter; (United States)
- Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Using scanning tunneling microscopy, we have investigated vacancy-mediated, layer-by-layer removal of surface atoms from Si(111) under 225-eV Xe-ion bombardment. We observe, with increasing substrate temperature, both the transition from vacancy-cluster nucleation to step retraction, and a transition from disruption to preservation of the 7{times}7 reconstruction on exposed material. We discuss the consequences of these observations for ion-beam-mediated epitaxy.
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 5424274
- Journal Information:
- Physical Review, B: Condensed Matter; (United States), Journal Name: Physical Review, B: Condensed Matter; (United States) Vol. 44:24; ISSN 0163-1829; ISSN PRBMD
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
EV RANGE 100-1000
IONS
MONOCRYSTALS
POINT DEFECTS
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
VACANCIES
XENON IONS
360602* -- Other Materials-- Structure & Phase Studies
665300 -- Interactions Between Beams & Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
EV RANGE 100-1000
IONS
MONOCRYSTALS
POINT DEFECTS
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
VACANCIES
XENON IONS