Anisotropic vacancy kinetics and single-domain stabilization on Si(100)-2 times 1

Journal Article · Sun Feb 02 23:00:00 EST 1992 · Physical Review Letters; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.68.646· OSTI ID:5026337

Bedrossian, P; Klitsner, T ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

Preferential annihilation of mobile surface vacancies at the ends, rather than the sides, of dimer rows leads to a new, nonequilibrium, single-domain phase of Si(100) that is not accessible by epitaxial growth, but is stable at moderate temperatures ({ital T}{similar to}450 {degree}C). These results emerge from a tunneling-microscope study of layer-by-layer removal of Si from Si(100) under 225-eV Xe-ion bombardment.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5026337
• Journal Information: Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:5; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
360606 -- Other Materials-- Physical Properties-- (1992-)
ADSORPTION
ANNIHILATION
BASIC INTERACTIONS
BEAMS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELECTROMAGNETIC INTERACTIONS
ELECTRON MICROSCOPES
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
INTERACTIONS
ION BEAMS
MICROSCOPES
MOBILITY
PARTICLE INTERACTIONS
POINT DEFECTS
SEMIMETALS
SILICON
SORPTION
SPUTTERING
SURFACE PROPERTIES
VACANCIES