Layer-by-layer sputtering and epitaxy of Si(100)

Journal Article · Mon Jul 01 04:00:00 EDT 1991 · Physical Review Letters; (USA)

DOI:https://doi.org/10.1103/PhysRevLett.67.124· OSTI ID:5634930

Bedrossian, P; Houston, J E; Tsao, J Y; Chason, E; Picraux, S T ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (US)

We report oscillations in diffracted electron intensities during ion bombardment of Si(100) by 200- and 250-eV Xe, both alone and with sequential and simultaneous epitaxy. Analysis of the phase and frequency of the oscillations shows that, to first order, ion bombardment undoes'' previous epitaxy and cancels or partially cancels simultaneous deposition. Surprisingly, the phase relationship of growth and sputtering is both antisymmetric {ital and} linear, indicating that the ion-induced oscillations are dominated by simple, vacancy-mediated, layer-by-layer sputtering.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5634930
• Journal Information: Physical Review Letters; (USA), Journal Name: Physical Review Letters; (USA) Vol. 67:1; ISSN PRLTA; ISSN 0031-9007
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHARGED PARTICLES
COHERENT SCATTERING
COLLISIONS
DIFFRACTION
ELECTRON DIFFRACTION
ELEMENTS
ENERGY RANGE
EPITAXY
EV RANGE
EV RANGE 100-1000
ION COLLISIONS
IONS
OSCILLATIONS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SCATTERING
SEMIMETALS
SILICON
SPUTTERING
SURFACE PROPERTIES
XENON IONS