Simulations of layer-by-layer sputtering during epitaxy

Journal Article · Mon Dec 30 04:00:00 EST 1991 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.105648· OSTI ID:5945206

Chason, E; Bedrossian, P; Houston, J E; Tsao, J Y; Dodson, B W; Picraux, S T ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We have performed computer simulations of simultaneous and sequential ion bombardment and epitaxial growth. In agreement with recent reflection high-energy electron diffraction (RHEED) measurements on Si, we observe ion-induced RHEED oscillations, a cancellation of RHEED oscillations during simultaneous equal-rate ion bombardment and growth, and a reversal of growth-induced roughening by subsequent ion bombardment. Comparison between simulations and measurements indicate that a model of the ion/surface interaction characterized by the creation of mobile vacancies with minimal preferential sputtering is sufficient to simulate all the RHEED measurements.

• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5945206
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 59:27; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
360605 -- Materials-- Radiation Effects
COMPUTERIZED SIMULATION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEFECTS
ELEMENTS
EPITAXY
MOLECULAR BEAM EPITAXY
MONTE CARLO METHOD
MORPHOLOGY
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
RADIATION EFFECTS
ROUGHNESS
SEMIMETALS
SILICON
SIMULATION
SPUTTERING
SURFACE PROPERTIES
VACANCIES