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An approach toward 25-percent efficient GaAs heteroface solar cells

Journal Article · · IEEE Transactions on Energy Conversion; (USA)
DOI:https://doi.org/10.1109/16.30927· OSTI ID:5418153
;  [1];  [2]
  1. Georgia Inst. of Tech., Atlanta, GA (USA). School of Electrical Engineering
  2. Spire Corp., Bedford, MA (USA)
In order to approach one-sun 25-percent efficiency in GaAs solar cells, it is necessary to improve the basic understanding of internal loss mechanisms by a combination of characterization techniques and computer models. A methodology is developed to measure and evaluate minority-carrier transport properties such as lifetime and recombination velocity throughout the device structure in a 21.2-percent GaAs cell. It is found that this cell has a recombination velocity of 1.25 X 10/sup 5/ cm/s at the AlGaAs/GaAs interface and a base minority-carrier lifetime of 8 ns. Guidelines are provided to increase the efficiency of this cell to 24 percent with slightly increased surface passivation and base lifetime using effective recombination velocity and device modeling computer programs. Further device modeling is performed to show that efficiencies of 25 percent can be obtained using a modified heteroface structure with a moderate surface recombination velocity of 1 X 10/sup 4/ cm/s if lifetime limiting mechanisms and their relation to device design are fully understood.
OSTI ID:
5418153
Journal Information:
IEEE Transactions on Energy Conversion; (USA), Journal Name: IEEE Transactions on Energy Conversion; (USA) Vol. 36:7; ISSN 0885-8969; ISSN ITCNE
Country of Publication:
United States
Language:
English