Heteroface gallium arsenide solar cells electron induced degradation analytical model

Journal Article · Sun Jun 01 04:00:00 EDT 1986 · IEEE Trans. Nucl. Sci.; (United States)

DOI:https://doi.org/10.1109/TNS.1986.4334533· OSTI ID:5666580

Prat, L; Moreno, E G; Castaner, L

A model is presented which allows the calculation of the electron induced degradation in heteroface AlGaAs-GaAs solar cells. The temperature dependence of the semiconductor parameters is also included. The radiation effects have been modeled by the minority carrier lifetime degradation. The best agreement with experimental results is obtained when the recombination center capture cross section in p-GaAs region has a value of 4 10/sup -12/cm/sup 2/ and the introduction rate is set to 0.1 cm/sup -1/. An optimum thickness of the p-GaAs layer of 0.3..mu..m has been found. In this geometry, the temperature variation of the efficiency has a coefficient of 32.2K which is consistent with experimental data.

• Research Organization: Departament of Electronics, E.T.S.I. Telecomunicacion UPC, Jorge Girona Salgado s/n, Barcelona-08034
• OSTI ID: 5666580
• Journal Information: IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-33:3; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CAPTURE
CARRIER LIFETIME
CROSS SECTIONS
DIMENSIONS
DIRECT ENERGY CONVERTERS
ELECTRON CAPTURE
ELECTRONS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
GALLIUM ARSENIDE SOLAR CELLS
LEPTONS
LIFETIME
MATERIALS
MATHEMATICAL MODELS
P-TYPE CONDUCTORS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RECOMBINATION
SEMICONDUCTOR MATERIALS
SOLAR CELLS
SOLAR EQUIPMENT
TEMPERATURE DEPENDENCE
THICKNESS