Computer modeling study of the effects of inhomogeneous doping and/or composition in GaAs solar-cell devices

Journal Article · Sun Sep 15 04:00:00 EDT 1985 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.335957· OSTI ID:5465060

Hamaker, H C

The effects of inhomogeneous doping and/or composition profiles in the active regions of AlGaAs/GaAs heteroface solar cells have been studied using a realistic computer model. It is found that for n-p devices with moderate surface recombination velocities S, only modest improvements in the cell efficiency are obtained by including linear or exponential profiles. Such gradients become more valuable, however, whenever (1) S increases, (2) the solar illumination is increased through concentration, or (3) a p-n device is desired.

• Research Organization: Varian Research Center, 611 Hansen Way, Palo Alto, California 94303
• OSTI ID: 5465060
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 58:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
ALUMINIUM ARSENIDE SOLAR CELLS
CHEMICAL COMPOSITION
COMPUTERIZED SIMULATION
CRYSTAL DOPING
DATA
DIRECT ENERGY CONVERTERS
EFFICIENCY
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
HETEROJUNCTIONS
INFORMATION
JUNCTIONS
NUMERICAL DATA
P-N JUNCTIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
RECOMBINATION
SEMICONDUCTOR JUNCTIONS
SIMULATION
SOLAR CELLS
SOLAR EQUIPMENT
THEORETICAL DATA