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U.S. Department of Energy
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Thin film polycrystalline silicon solar cells. Quarterly technical progress report No. 2, 1 January 1980-31 March 1980

Technical Report ·
DOI:https://doi.org/10.2172/5416639· OSTI ID:5416639

During this second quarter of the program, data on the effects of trace amounts (ppM level) of oxygen on the MoSi/sub 2/ substrate separation layer have been refined. Analysis of the composit substrate process has indicated that its complexity and expense are too great for practical development; as a result of this, and continued success with Mo substrates, efforts on composite substrates have been discontinued. By extensive operation of the semicontinuous plasma deposition system, operational characteristics have been further defined, permitting requirements for designing a truly continuous microcrystalline silicon film deposition system to be determined. Gas chromatography has been used to characterize the silicon deposition process using the silicon bearing gases SiCl/sub 4/, SiHCl/sub 3/, and SiH/sub 2/Cl/sub 2/; in all cases, deposition efficiency was found to be higher when using plasma than with conventional CVD. Solar cell fabrication and evaluation efforts have indicated that silicon films separated from Molybdenum substrates can yield cells up to 12.8% efficiency under AM1 illumination, and with average efficiencies above 11%.

Research Organization:
Motorola, Inc., Phoenix, AZ (USA)
Sponsoring Organization:
USDOE
DOE Contract Number:
AC02-77CH00178
OSTI ID:
5416639
Report Number(s):
DOE/CH/00178-T1
Country of Publication:
United States
Language:
English