Exploratory development of thin film polycrystallline silicon photovoltaic devices. Production of self-supporting microcrystalline silicon films. Topical report No. 1
Deposition of thin film polycrystalline silicon films on molybdenum substrates, and their separation, intact, during cooldown following the deposition process, have been repeatedly demonstrated. Deposition parameters using a high pressure plasma source have been studied for inputs of SiCl/sub 4/, SiHCl/sub 3/ and SiH/sub 2/Cl/sub 2/. Conditions for obtaining the best combination of deposition efficiency, throughput rate, and surface morphology are specified. These data were used to design a continuous system in which the Si films are deposited on all four walls of square boxes that are moved continuously down the high temperature chamber, thus permitting uniform film thickness and optimum throughput. The continuous apparatus incorporates series of sensors to permit safe and reproducible operation, and can be controlled entirely by a microprocessor system.
- Research Organization:
- Motorola, Inc., Phoenix, AZ (USA)
- DOE Contract Number:
- AC02-77CH00178
- OSTI ID:
- 6317508
- Report Number(s):
- SERI/PR-9100-1-T1; ON: DE81026224
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thin-film polycrystalline silicon solar cells. Final technical report, 1 October 1979-30 September 1980
Exploratory development of thin-film polycrystalline-silicon photovoltaic devices. Final technical report
Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
CHEMICAL REACTORS
CHLORINE COMPOUNDS
COMPUTERIZED CONTROL SYSTEMS
CONTROL SYSTEMS
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
EFFICIENCY
ELEMENTS
EXPANSION
HALOGEN COMPOUNDS
HYDRIDES
HYDROGEN COMPOUNDS
METALS
MICROSTRUCTURE
MOLYBDENUM
OPTIMIZATION
PLASMA ARC SPRAYING
POLYCRYSTALS
PRODUCTION
REFRACTORY METALS
SEMIMETALS
SILANES
SILICON
SILICON COMPOUNDS
SPRAY COATING
STRESSES
SUBSTRATES
SURFACE COATING
THERMAL EXPANSION
THERMAL STRESSES
TRANSITION ELEMENTS