Electrically neutral nitrogen dangling-bond defects in amorphous hydrogenated silicon nitride thin films

Journal Article · Thu Aug 15 04:00:00 EDT 1991 · Journal of Applied Physics; (United States)

DOI:https://doi.org/10.1063/1.349433· OSTI ID:5411713

Warren, W L ^[1]; Lenahan, P M ^[2]; Kanicki, J ^[3]

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1. Electronic Properties of Materials Division, Sandia National Laboratories, Albuquerque, New Mexico (USA)
2. The Pennsylvania State University, University Park, Pennsylvania (USA)
3. IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, New York (USA)

We have investigated the effects of different post-deposition temperature anneals and N-H concentrations, on the generation of ultraviolet (UV)-induced two-coordinated nitrogen dangling bonds in plasma-enhanced chemical vapor deposited (PECVD) silicon nitride films using electron spin resonance (ESR). It is shown that the nitrogen dangling bond is activated by post-deposition anneals with temperatures as low as 500 {degree}C in N-rich PECVD nitride films followed by subsequent UV broadband illumination. It also appears that there is a possible correlation between the initial N-H concentration in the films and the concentration of generated nitrogen dangling bonds following the anneal/UV sequence. We also report the charge state associated with the nitrogen dangling bond using a combination of ESR and capacitance versus voltage measurements; these measurements suggest that this two-coordinated defect is electrically neutral when paramagnetic.

• OSTI ID: 5411713
• Journal Information: Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 70:4; ISSN 0021-8979; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360202* -- Ceramics
Cermets
& Refractories-- Structure & Phase Studies
AMORPHOUS STATE
ANNEALING
CHARGE STATE
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
ELEMENTS
FILMS
HEAT TREATMENTS
HIGH TEMPERATURE
HYDROGEN ADDITIONS
LIGHT TRANSMISSION
MAGNETIC RESONANCE
NITRIDES
NITROGEN
NITROGEN COMPOUNDS
NONMETALS
PLASMA
PNICTIDES
QUANTITY RATIO
RADIATIONS
RESONANCE
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE COATING
THIN FILMS
ULTRAVIOLET RADIATION