Optically induced nitrogen dangling-bonds in amorphous hydrogenated silicon nitride thin films

Conference · Tue Jan 01 04:00:00 EST 1991

OSTI ID:5329608

Warren, W L; McWhorter, P J ^[1]; Kanicki, J ^[2]; Poindexter, E H ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. IBM Watson Research Center, Yorktown Heights, NY (United States)
3. Army Electronics Technology and Devices Lab., Fort Monmouth, NJ (United States)

Using X-band and Q-band electron paramagnetic resonance (EPR) microwave frequencies we have confirmed a model for the ultra-violet (UV) induced nitrogen dangling-bond in N-rich amorphous hydrogenated silicon nitride thin films. We also report for the first time that the UV-induced N dangling-bonds can be photo-bleached (light induced annealing) by sub-bandgap light. Since the photo-bleaching phenomenon is reversible, i.e., these defect centers can be reversibly photo-created or photo-bleached -- a process requiring short vs. long-wave UV -- without any change in the net space charge density of the films, it is suggested that an optical rearrangement of spin state and charge state of positive, negative, and neutral nitrogen sites occurs. This study has also shown that the N dangling-bond is an electrically active point defect in these thin films.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: DOE; USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 5329608
• Report Number(s): SAND-91-2371C; CONF-9105342--1; ON: DE92013660
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
664200 -- Spectra of Atoms & Molecules & their Interactions with Photons-- (1992-)
74 ATOMIC AND MOLECULAR PHYSICS
AMORPHOUS STATE
BIOLOGICAL RECOVERY
BIOLOGICAL REPAIR
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DEPOSITION
ELECTROMAGNETIC RADIATION
ELECTRON SPIN RESONANCE
FILMS
HYPERFINE STRUCTURE
MAGNETIC RESONANCE
MORPHOLOGICAL CHANGES
NITRIDES
NITROGEN COMPOUNDS
PHOTOREACTIVATION
PHYSICAL RADIATION EFFECTS
PNICTIDES
POINT DEFECTS
QUANTUM NUMBERS
RADIATION EFFECTS
RADIATIONS
REPAIR
RESONANCE
SILICON COMPOUNDS
SILICON NITRIDES
SURFACE COATING
THIN FILMS
ULTRASTRUCTURAL CHANGES
ULTRAVIOLET RADIATION