Optically induced nitrogen dangling-bonds in amorphous hydrogenated silicon nitride thin films

Conference · Tue Dec 31 04:00:00 EST 1991

OSTI ID:10147504

Warren, W L; McWhorter, P J ^[1]; Kanicki, J ^[2]; Poindexter, E H ^[3]

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1. Sandia National Labs., Albuquerque, NM (United States)
2. IBM Watson Research Center, Yorktown Heights, NY (United States)
3. Army Electronics Technology and Devices Lab., Fort Monmouth, NJ (United States)

Using X-band and Q-band electron paramagnetic resonance (EPR) microwave frequencies we have confirmed a model for the ultra-violet (UV) induced nitrogen dangling-bond in N-rich amorphous hydrogenated silicon nitride thin films. We also report for the first time that the UV-induced N dangling-bonds can be photo-bleached (light induced annealing) by sub-bandgap light. Since the photo-bleaching phenomenon is reversible, i.e., these defect centers can be reversibly photo-created or photo-bleached -- a process requiring short vs. long-wave UV -- without any change in the net space charge density of the films, it is suggested that an optical rearrangement of spin state and charge state of positive, negative, and neutral nitrogen sites occurs. This study has also shown that the N dangling-bond is an electrically active point defect in these thin films.

• Research Organization: Sandia National Labs., Albuquerque, NM (United States)
• Sponsoring Organization: USDOE, Washington, DC (United States)
• DOE Contract Number: AC04-76DP00789
• OSTI ID: 10147504
• Report Number(s): SAND--91-2371C; CONF-9105342--1; ON: DE92013660
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360602
664200
74 ATOMIC AND MOLECULAR PHYSICS
AMORPHOUS STATE
CHEMICAL VAPOR DEPOSITION
ELECTRON SPIN RESONANCE
HYPERFINE STRUCTURE
PHOTOREACTIVATION
PHYSICAL RADIATION EFFECTS
POINT DEFECTS
QUANTUM NUMBERS
SILICON NITRIDES
SPECTRA OF ATOMS AND MOLECULES AND THEIR INTERACTIONS WITH PHOTONS
STRUCTURE AND PHASE STUDIES
THIN FILMS
ULTRASTRUCTURAL CHANGES
ULTRAVIOLET RADIATION