Optically induced nitrogen dangling-bonds in amorphous hydrogenated silicon nitride thin films
- Sandia National Labs., Albuquerque, NM (United States)
- IBM Watson Research Center, Yorktown Heights, NY (United States)
- Army Electronics Technology and Devices Lab., Fort Monmouth, NJ (United States)
Using X-band and Q-band electron paramagnetic resonance (EPR) microwave frequencies we have confirmed a model for the ultra-violet (UV) induced nitrogen dangling-bond in N-rich amorphous hydrogenated silicon nitride thin films. We also report for the first time that the UV-induced N dangling-bonds can be photo-bleached (light induced annealing) by sub-bandgap light. Since the photo-bleaching phenomenon is reversible, i.e., these defect centers can be reversibly photo-created or photo-bleached -- a process requiring short vs. long-wave UV -- without any change in the net space charge density of the films, it is suggested that an optical rearrangement of spin state and charge state of positive, negative, and neutral nitrogen sites occurs. This study has also shown that the N dangling-bond is an electrically active point defect in these thin films.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (United States)
- Sponsoring Organization:
- USDOE, Washington, DC (United States)
- DOE Contract Number:
- AC04-76DP00789
- OSTI ID:
- 10147504
- Report Number(s):
- SAND-91-2371C; CONF-9105342-1; ON: DE92013660
- Resource Relation:
- Conference: Electro Chemical Society (ECS) meeting,St. Louis, MO (United States),17-22 May 1991; Other Information: PBD: [1991]
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
74 ATOMIC AND MOLECULAR PHYSICS
SILICON NITRIDES
POINT DEFECTS
ULTRAVIOLET RADIATION
PHYSICAL RADIATION EFFECTS
ELECTRON SPIN RESONANCE
THIN FILMS
CHEMICAL VAPOR DEPOSITION
HYPERFINE STRUCTURE
QUANTUM NUMBERS
ULTRASTRUCTURAL CHANGES
PHOTOREACTIVATION
AMORPHOUS STATE
360602
664200
STRUCTURE AND PHASE STUDIES
SPECTRA OF ATOMS AND MOLECULES AND THEIR INTERACTIONS WITH PHOTONS