Identification and structure of the 0.95 eV photoluminescence centers in n-type GaAs
Book
·
OSTI ID:541093
- Ioffe Physical-Technical Inst., St. Petersburg (Russian Federation)
The authors investigated the stress dependences for the 0.95 eV photoluminescence band in GaAs doped with Te, S, Sn or Si. The results suggest that the complex responsible for this band includes a shallow donor apart from a divacancy V{sub As}V{sub Ga}. An alignment of the Jahn-Teller distortions has been found for these complexes.
- OSTI ID:
- 541093
- Report Number(s):
- CONF-960450--; ISBN 0-7803-3179-6
- Country of Publication:
- United States
- Language:
- English
Similar Records
Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure
Shallow dopants and the role of hydrogen in epitaxial layers of gallium nitride (GaN)
Microscopic photoluminescence mapping of Si-doped GaAs around dislocations at low temperatures
Conference
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:541091
Shallow dopants and the role of hydrogen in epitaxial layers of gallium nitride (GaN)
Book
·
Mon Dec 30 23:00:00 EST 1996
·
OSTI ID:417636
Microscopic photoluminescence mapping of Si-doped GaAs around dislocations at low temperatures
Conference
·
Sat Nov 30 23:00:00 EST 1996
·
OSTI ID:405543