Microscopic photoluminescence mapping of Si-doped GaAs around dislocations at low temperatures
Conference
·
OSTI ID:405543
- Institute of Space and Astronautical Science, Yoshinodai, Sagamihara (Japan)
- Science Univ. of Tokyo (Japan); and others
Microscopic intensity variations of photoluminescence (PL) bands around dislocations were studied on Si-doped, liquid-encapsulated vertical boat grown GaAs at low temperatures. We measured the PL mappings for four emission bands: the 1.49eV band of free-to-acceptor and donor-acceptor transitions involving Si{sub As}, the 1.33eV band associated with B{sub As}, the 1.15eV band due to V{sub Ga} complex, and the 0.95 eV band which appears commonly in n-type GaAs but has not yet been identified definitely. The PL intensity patterns of each emission band are explained based on the concept that defects have been gettered by the dislocations and that the area near the dislocations is more As-rich than that farther away.
- OSTI ID:
- 405543
- Report Number(s):
- CONF-951231--
- Country of Publication:
- United States
- Language:
- English
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