Optical and electrical properties of MBE grown cubic GaN/GaAs epilayers doped by Si[Molecular Beam Epitaxy]
Conference
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OSTI ID:20104562
- and others
Si-doping of cubic GaN epilayers grown by an rf plasma-assisted molecular beam epitaxy on semi-insulating GaAs (001) substrates is investigated by secondary ion mass spectroscopy (SIMS), photoluminescence (PL) and by Hall-effect measurements. SIMS measurements show a homogeneous incorporation of Si in cubic GaN epilayers up to concentrations of 5 x 10{sup 19} cm{sup {minus}3}. PL shows a clear shift of the donor-acceptor emission to higher energies with increasing Si-doping. Above a Si-flux of 1 x 10{sup 11} cm{sup {minus}2} s{sup {minus}1} the near band edge lines merge to one broad band due to band gap renormalization and conduction band filling effects. The influence of the high dislocation density ({approx} 10{sup 11} cm{sup {minus}2}) in c-GaN:Si on the electrical properties is reflected in the dependence of the electron mobility on the free carrier concentration. The authors find that dislocations in cubic GaN act as acceptors and are electrically active.
- Research Organization:
- Univ. Paderborn (DE)
- Sponsoring Organization:
- Deutsche Forschungsgemeinschaft DFG (German Research Partnership)
- OSTI ID:
- 20104562
- Country of Publication:
- United States
- Language:
- English
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