Infrared microscopic photoluminescence mapping on semiconductors at low temperatures

Conference · Sun Dec 01 04:00:00 EST 1996

OSTI ID:405541

Tajima, M ^[1]

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1. Institute of Space and Astronautical Science, Sagamihara (Japan)

Highly spatially resolved mapping of photoluminescence (PL) in the infrared region at low temperatures has been carried out for the analysis of deep-levels in semiconductors. A unique scanning-laser-beam type of apparatus was developed with an excitation beam of 10 pm diam, a scanning area of 1 mm x 1 mm, a wavelength region between 600 and 1800 nm, and a temperature range between 15 and 300 K. The microscopic mapping of deep-level PL from an annealed Czochralski-grown Si crystal with slip dislocations was analyzed for the first time. An opposite intensity contrast between the 0.77 eV band (D{sub b} band) and dislocation-related D-lines gives strong evidence for the idea that the D{sub b} band is due not to dislocations but to oxygen precipitates.

• OSTI ID: 405541
• Report Number(s): CONF-951231--
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
DISLOCATIONS
OXYGEN
PHOTOLUMINESCENCE
PRECIPITATION
SILICON
SLIP