Temperature dependence of photoluminescence from Mg-implanted GaAs

Journal Article · Wed Jun 01 04:00:00 EDT 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.324007· OSTI ID:7113002

Yu, P W; Park, Y S

Photoluminescence emission characteristics from Mg-implanted GaAs are presented for the temperature range T=4.2--293 degreeK. The emission due to recombination of free electrons with holes bound to neutral Mg acceptors is a dominant radiative process in heavily implanted samples at temperatures Tapproximately-less-than210 degreeK. Changes in the emission energies and intensities as a function of temperature lead to the determination of the binding energy of Mg as 28 +- 2 meV. The donor-acceptor pair band involving Mg, which has a large energy shift with the change of excitation intensity, shows the lower-energy shift with an increase of temperature in the range T=4.2--50 degreeK. This is explained by associating deeper donor states than the hydrogenic donors to the donor-acceptor pair band. Depth dependence of the donor-acceptor pair and the free-electrons to the neutral Mg acceptor bands show a deep penetration of Mg acceptors.

• Research Organization: Department of Physics, University of Dayton, Dayton, Ohio 45469
• OSTI ID: 7113002
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:6; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
BINDING ENERGY
CHARGED PARTICLES
DOPED MATERIALS
EMISSION SPECTRA
ENERGY
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
ION IMPLANTATION
IONS
LUMINESCENCE
MAGNESIUM IONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SPECTRA
TEMPERATURE DEPENDENCE
TRAPS