Radiative recombination in melt-grown and Cd-implanted CuInSe$sub 2$

Journal Article · Sun Feb 01 04:00:00 EST 1976 · J. Appl. Phys., v. 47, no. 2, pp. 677-684

OSTI ID:4058685

Yu, P W

The behavior of the low-temperature emission spectra of melt-grown p- type and Cd-implanted n-type CuInSe$sub 2$ with changes in temperature and excitation intensity have been investigated. Broad-band emission was dominant in the melt-grown crystals grown under an excess Se atmosphere. Generally, the broad-band peak was observed to occur at about 0.94 to 0.95 eV, all peaks lying in the broad range of energy of about 0.87 to 0.95 eV at 4.2$sup 0$K. The band was observed to shift to higher energy as the excitation intensity or temperature was increased, which implies that the band is due to a donor-acceptor pair mechanism. The spectral characteristics are explained by the presence of an acceptor level (E/subA/=85+-2 MeV) and a donor level (E/subD/=65+-2 MeV) and by compensation-dependent band shift in the p-type crystals. Acceptors and donors responsible for the pair band appear to be Cu and Se vacancies. The change in the peak energy of the band per decade of excitation intensity was found to be in the range 4 to 25 MeV at 4.2$sup 0$K. The shift of the broad-band peak to lower energies and the increase in the magnitude of the energy shift due to the excitation intensity are consistent with high doping and compensation. A broad emission band was also observed in Cd-implanted crystals at low temperatures. The temperature dependence of the broad band in these crystals was opposite to that of the p-type crystals, the peak shifting to lower energy with an increase in temperature. (AIP)

• Research Organization: Department of Physics, University of Dayton, Dayton, Ohio 45469
• NSA Number: NSA-33-023695
• OSTI ID: 4058685
• Journal Information: J. Appl. Phys., v. 47, no. 2, pp. 677-684, Journal Name: J. Appl. Phys., v. 47, no. 2, pp. 677-684; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

*COPPER SELENIDES-- PHYSICAL RADIATION EFFECTS
*INDIUM SELENIDES-- PHYSICAL RADIATION EFFECTS
360206* --Materials--Ceramics
Cermets & Refractories-- Radiation Effects
CADMIUM IONS
EMISSION SPECTRA
EXCITATION
ION IMPLANTATION
N50140* --Metals
Ceramics
& Other Materials--Ceramics & Cermets--Radiation Effects
PHOTOLUMINESCENCE
RECOMBINATION
SPECTRAL SHIFT
TEMPERATURE DEPENDENCE
VACANCIES