Photoluminescence from Mg-implanted GaAs

Journal Article · Sat Jan 01 04:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89212· OSTI ID:7343218

Yu, P W; Park, Y S

Photoluminescence measurements at 4.2 degreeK were used to study the emission behavior and the annealing characteristics in Mg-ion-implanted layers in GaAs. Radiative recombination due to the donor-acceptor pairs and free electrons with holes bound to acceptors involving Mg was observed. The ionization of Mg is esti mated to be 28 +- 2 meV. The donor-acceptor pair band shows a large energy shift with the change of the excitation intensity. Annealing at the temperatures 750--900 degreeC sufficient to optically activate Mg ions implanted and to recover from lattice damages. (AIP)

• Research Organization: Department of Physics, University of Dayton, Dayton, Ohio 45469
• OSTI ID: 7343218
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 30:101; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
ATOMIC IONS
CHARGED PARTICLES
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
ION IMPLANTATION
IONS
LUMINESCENCE
MAGNESIUM IONS
PHOTOLUMINESCENCE
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
RECOMBINATION