Photoluminescence study of germanium-implanted gallium arsenide. Master's thesis

Technical Report · Sun Dec 01 04:00:00 EST 1985

OSTI ID:6228528

Thoma, B P

The low-temperature photoluminescence properties of Ge-implanted GaAs was analyzed. Samples were singly implanted with Ge and As, and with Ge and Ga. The substrate used was semi-insulating chromium-doped GaAs. All ions were implanted at room temperature, with an implantation energy of 120 keV. Dually implanted samples were first implanted with Ge, and then with either As or Ga. All samples were encapsulated before annealing with approximately 1000 A of silicon nitride, which was subsequently removed prior to photoluminescence measurements. All samples were annealed at 900 C for 15 minutes. Two separate photoluminescence peaks related to Ge acceptors were found. They were due to a Ge donor-Ge acceptor transition and a conduction band-Ge acceptor transition. A single photoluminescence peak related to Ge donors was found. It was due to an exciton bound to a neutral donor or an ionized donor transition. Ge acceptor related peaks were found to be dominant in lower-dose Ge-implanted samples, and the Ge-donor-related peak was found to be dominant in higher-dose Ge-implanted samples. These characteristics were significantly modified, however, by the dual implantations. The Ge donor related peak was enhanced, and the Ge acceptor-related peaks were suppressed, by the additional As implantation. To a lesser extent, the opposite was true for the additional Ga implantation.

• Research Organization: Air Force Inst. of Tech., Wright-Patterson AFB, OH (USA). School of Engineering
• OSTI ID: 6228528
• Report Number(s): AD-A-179232/4/XAB; AFIT/GEP/ENP-86D-11
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360605* -- Materials-- Radiation Effects
ANNEALING
ARSENIC COMPOUNDS
ARSENIC IONS
ARSENIDES
CHARGED PARTICLES
CHROMIUM
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
ELEMENTS
ENERGY RANGE
EXCITONS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GALLIUM IONS
GERMANIUM IONS
HEAT TREATMENTS
IMPURITIES
ION IMPLANTATION
IONIZATION
IONS
KEV RANGE
KEV RANGE 100-1000
LUMINESCENCE
METALS
NITRIDES
NITROGEN COMPOUNDS
PHOTOLUMINESCENCE
PNICTIDES
QUASI PARTICLES
SAMPLING
SILICON COMPOUNDS
SILICON NITRIDES
TRANSITION ELEMENTS