Study of structure of low-symmetry complexes in n-GaAs through investigation of integrated polarization of photoluminescence under uniaxial pressure

Conference · Tue Dec 31 04:00:00 EST 1996

OSTI ID:541091

Gutkin, A A; Reshchikov, M A; Sedov, V E; Sosnovskii, V R ^[1]

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1. Ioffe Physical-Technical Inst., St. Petersburg (Russian Federation)

The authors have investigated the effect of uniaxial pressure on polarization of wide photoluminescence (PL) bands related to complexes in GaAs. It is shown that the V{sub Ga}Te{sub As}, V{sub Ga}Sn{sub Ga} and V{sub Ga}Si{sub Ga} complexes responsible for the 1.2 eV PL band and the Cu{sub Ga}Te{sub As}, Cu{sub Ga}S{sub As} and Cu{sub Ga}Se{sub As} complexes responsible for the 1.3 eV PL band have an additional distortion which can be reoriented and aligned by uniaxial pressure in conditions of PL observation at low temperature.

• OSTI ID: 541091
• Report Number(s): CONF-960450--; ISBN 0-7803-3179-6
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DEFECTS
GALLIUM ARSENIDES
GRAIN ORIENTATION
N-TYPE CONDUCTORS
PHOTOLUMINESCENCE
PRESSURE DEPENDENCE