Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The photoluminescence (PL) of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells is studied at temperatures of 77 and 300 K under conditions of uniaxial compression along the [110] direction. There are two main lines in the PL spectra; at zero pressure and T = 77 K, the peaks appear at 1.517 and 1.532 eV. Comparison of the pressure dependences of the peak positions and the polarization of the PL measured experimentally with those calculated theoretically gives evidence that, at T {>=} 77 K, these bands originate from the recombination of free electrons with heavy and light holes in the GaAs valence band.
- OSTI ID:
- 22004910
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 42; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
Similar Records
Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells
Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells
Hydrostatic pressure effect on photoluminescence from a GaN{sub 0.015}As{sub 0.985}/GaAs quantum well
Journal Article
·
Sat Mar 15 00:00:00 EDT 2008
· Semiconductors
·
OSTI ID:21087908
Influence of alpha particle bombardment and postannealing on photoluminescence from GaAs/Al{sub 0.35}Ga{sub 0.65}As multiple quantum wells
Journal Article
·
Fri Jun 01 00:00:00 EDT 2001
· Journal of Applied Physics
·
OSTI ID:40203711
Hydrostatic pressure effect on photoluminescence from a GaN{sub 0.015}As{sub 0.985}/GaAs quantum well
Journal Article
·
Mon Jun 04 00:00:00 EDT 2001
· Applied Physics Letters
·
OSTI ID:40203163