Polarization-resolved photoluminescence piezospectroscopy of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
The photoluminescence (PL) of GaAs/Al{sub 0.35}Ga{sub 0.65}As:Be quantum wells is studied at temperatures of 77 and 300 K under conditions of uniaxial compression along the [110] direction. There are two main lines in the PL spectra; at zero pressure and T = 77 K, the peaks appear at 1.517 and 1.532 eV. Comparison of the pressure dependences of the peak positions and the polarization of the PL measured experimentally with those calculated theoretically gives evidence that, at T {>=} 77 K, these bands originate from the recombination of free electrons with heavy and light holes in the GaAs valence band.
- OSTI ID:
- 21087908
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 42; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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