Perfection of epitaxial layers of gallium arsenide grown in a temperature-gradient field

Journal Article · Tue Apr 01 04:00:00 EST 1986 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:5400039

Gaponenko, V N; Lunin, L S; Lunina, O D; Ratushnyi, V I

The authors pose the following problem: to construct statistical models relating the dislocation density to the temperature of the process, the thickness of the liquid zone, and the impurity concentration and to estimate with their help the contribution of the indicated factors to the formation of the dislocation structure of undoped epitaxial layers of gallium arsenide. It is shown that the effect of the carrier concentration on the dislocation density decreases as the temperature is raised, as the zone thickness is increased, and in the impurity series Sn, Zn, Te.

• Research Organization: Novocherkassk Polytechnical Institute
• OSTI ID: 5400039
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 21:11; ISSN INOMA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL MODELS
CRYSTAL STRUCTURE
DIMENSIONS
DISLOCATIONS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELEMENTS
EPITAXY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
LINE DEFECTS
LIQUID PHASE EPITAXY
MATHEMATICAL MODELS
MELTING
METALLURGICAL EFFECTS
METALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
RECRYSTALLIZATION
SEMIMETALS
STATISTICAL MODELS
TELLURIUM
TEMPERATURE EFFECTS
TEMPERATURE GRADIENTS
THICKNESS
TIN
ZINC
ZONE MELTING