Growth and impurity-trapping kinetics in sulfur-doped gallium arsenide epitaxy
Journal Article
·
· Sov. Phys. J. (Engl. Transl.); (United States)
Measurements have been made on the effects of crystallization conditions on the growth rates and electrophysical parameters for sulfur-doped epitaxial gallium arsenide films: gas speed, supersaturation, and deposition temperature. There is a correlation between the impurity concentration and the growth rate. The results are discussed from a model that incorporates interaction between impurity atoms and matrix ones.
- Research Organization:
- Tomsk Univ. (USSR)
- OSTI ID:
- 5978161
- Journal Information:
- Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 31:1; ISSN SOPJA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
CRYSTAL GROWTH
CRYSTALLIZATION
DIFFUSION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FILMS
FLUID FLOW
FLUORIDES
FLUORINE COMPOUNDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAS FLOW
HALIDES
HALOGEN COMPOUNDS
IMPURITIES
KINETICS
MATERIALS
NONMETALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
SULFUR
SULFUR COMPOUNDS
SULFUR FLUORIDES
TEMPERATURE DEPENDENCE
THIN FILMS
TRAPPING
VAPOR PHASE EPITAXY
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL DOPING
CRYSTAL GROWTH
CRYSTALLIZATION
DIFFUSION
DOPED MATERIALS
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
FILMS
FLUID FLOW
FLUORIDES
FLUORINE COMPOUNDS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
GAS FLOW
HALIDES
HALOGEN COMPOUNDS
IMPURITIES
KINETICS
MATERIALS
NONMETALS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
SULFUR
SULFUR COMPOUNDS
SULFUR FLUORIDES
TEMPERATURE DEPENDENCE
THIN FILMS
TRAPPING
VAPOR PHASE EPITAXY