Formation of centers with deep levels in gaseous phase epitaxy of gallium arsenide

Journal Article · Sat Nov 01 04:00:00 EST 1986 · Sov. Phys. J. (Engl. Transl.); (United States)

DOI:https://doi.org/10.1007/BF00895287· OSTI ID:5250688

Lavrent'eva, L G; Vilisova, M D

The authors review the experimental research of the last decade into the laws of formation of the defects responsible for the deep levels in epitaxial layers of gallium arsenide grown from the vapor phase. The topics of their review include the influence of the ratio of the pressure of As and Ga in the vapor phase on defect concentration, the role played by the defects in carrier lifetime, density and mobility as well as in the ultimate electrical and photo conductivity of the material, the behavior of various feedstocks and impurities and their contributions to defect structure, and the dependence of defect concentration on growth conditions.

• Research Organization: Tomsk State Univ. (USSR)
• OSTI ID: 5250688
• Journal Information: Sov. Phys. J. (Engl. Transl.); (United States), Journal Name: Sov. Phys. J. (Engl. Transl.); (United States) Vol. 29:5; ISSN SOPJA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501 -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
360603 -- Materials-- Properties
ARSENIC COMPOUNDS
ARSENIDES
CARRIER DENSITY
CARRIER LIFETIME
CARRIER MOBILITY
CHARGE CARRIERS
CRYSTAL DEFECTS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
CRYSTALLIZATION
DIFFUSION LENGTH
DIMENSIONS
DIRECT ENERGY CONVERTERS
DOCUMENT TYPES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON DENSITY
ELECTRON MOBILITY
EPITAXY
EQUIPMENT
GALLIUM ARSENIDE SOLAR CELLS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
IMPURITIES
IONIZATION
LATTICE PARAMETERS
LENGTH
LIFETIME
MOBILITY
PARTIAL PRESSURE
PARTICLE MOBILITY
PHASE TRANSFORMATIONS
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
PNICTIDES
PRESSURE DEPENDENCE
QUANTITY RATIO
REVIEWS
SOLAR CELLS
SOLAR EQUIPMENT
TEMPERATURE DEPENDENCE
VAPOR PHASE EPITAXY