Defect formation in epitaxial layers of doped with cd and sn
The authors consider the dislocation structure and impurity-atom distributions in GaSb epitaxial layers doped with Cd and Sn and grown by liquid-phase epitaxy (LPE) on undoped gallium antimonide substrates. A horizontal apparatus was used to carry out epitaxy. The samples were investigated by x-ray topography and double-crystal spectroscopy. The concentration and mobility of the charge carriers were determined by Hall-effect measurements using the Van der Pauw method. It is shown that in the case of double doping of gallium antimonide by cadmium and tin the dislocation density may decrease by an order of magnitude compared to values obtained when these impurities are individually added. A possible distribution mechanism of Cd and Sn atoms in the GaSb lattice is presented.
- Research Organization:
- M.V. Lomonosov Moscow Institute of Fine Chemical Technology
- OSTI ID:
- 6884075
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 22:5; ISSN INOMA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102 -- Metals & Alloys-- Structure & Phase Studies
360104* -- Metals & Alloys-- Physical Properties
ALLOYS
ANTIMONY ALLOYS
CADMIUM
CARRIER DENSITY
CARRIER MOBILITY
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL DOPING
CRYSTAL STRUCTURE
DIFFRACTION
DISLOCATIONS
ELEMENTS
EPITAXY
GALLIUM ALLOYS
HALL EFFECT
IMPURITIES
INTERMETALLIC COMPOUNDS
LINE DEFECTS
LIQUID PHASE EPITAXY
METALLURGICAL EFFECTS
METALS
MOBILITY
PNICTIDES
SCATTERING
TIN
X-RAY DIFFRACTION