Distinctive features of the crystallization of GaSb epitaxial layers from melts of the Cd-Sn system
The authors use methods of physicochemical analysis to investigate the GaSb-Cd-Sn cross sections of the phase diagram of the quaternary Ga-Sb-Cd-Sn system to choose the conditions for liquid-phase epitaxy of GaSb from mixed metallic melts of Cd with Sn, making it possible to obtain GaSb epitaxial layers doped concurrently with group-II and IV elements. Using differential thermal, x-ray crystallographic, and microstructural analyses as well as microhardness measurements, the authors studied the polythermal cross sections of the GaSb-Cd-Sn system. The redistribution of Sn and Cd atoms in the GaSb lattice as the temperature of the onset of epitaxial growth varies has a determining effect on the electrical, optical and structural properties of the epitaxial layers.
- Research Organization:
- M. V. Lomonosov Moscow Institute of Fine Chemical Technology, USSR
- OSTI ID:
- 5896302
- Journal Information:
- Inorg. Mater. (Engl. Transl.); (United States), Journal Name: Inorg. Mater. (Engl. Transl.); (United States) Vol. 23:1; ISSN INOMA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360102* -- Metals & Alloys-- Structure & Phase Studies
360104 -- Metals & Alloys-- Physical Properties
ALLOYS
ANTIMONY ALLOYS
CADMIUM
CADMIUM ALLOYS
COHERENT SCATTERING
CRYSTAL DOPING
CRYSTAL STRUCTURE
CRYSTALLIZATION
DIAGRAMS
DIFFERENTIAL THERMAL ANALYSIS
DIFFRACTION
ELECTRICAL PROPERTIES
ELEMENTS
EPITAXY
GALLIUM ALLOYS
LIQUID PHASE EPITAXY
METALLURGICAL EFFECTS
METALS
MICROSTRUCTURE
OPTICAL PROPERTIES
PHASE DIAGRAMS
PHASE TRANSFORMATIONS
PHYSICAL PROPERTIES
PNICTIDES
SCATTERING
TEMPERATURE EFFECTS
THERMAL ANALYSIS
TIN
TIN ALLOYS
X-RAY DIFFRACTION