Properties of GaSb layers doped with rare-earth elements during liquid-phase epitaxy from Sn fluxes

Journal Article · Tue Jan 31 23:00:00 EST 1995 · Inorganic Materials

OSTI ID:161855

Arbenina, V V; Dmitrieva, G S; Daricheva, O E ^[1]

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1. Lomonosov Academy of Fine Chemical Technology, Moscow (Russian Federation)

The outlook for doping of III-V layers with rare-earth elements in the course of liquid-phase epitaxy is still unclear. The reason is that the available data on the influence of rare-earth dopants on the properties of epitaxial layers are treated differently, mainly because the concentrations of rare-earth atoms and their location in the crystal lattice of III-V compounds are difficult to determine by direct methods. Given that the liquid-phase epitaxy of rare-earth-doped GaSb using a conventional solvent (Ga) does not provide an unambiguous understanding of the state of rare-earth atoms in the lattice of GaSb, the solvent used here was Sn.

• OSTI ID: 161855
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 2 Vol. 31; ISSN 0020-1685; ISSN INOMAF
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER MOBILITY
CRYSTAL DOPING
ELECTRICAL PROPERTIES
GALLIUM ANTIMONIDES
LIQUID PHASE EPITAXY
MATHEMATICAL MODELS
RARE EARTHS
STRUCTURAL CHEMICAL ANALYSIS