Luminescent characteristics of rare-earth-doped GaSb epitaxial layers

Journal Article · Tue Jan 31 23:00:00 EST 1995 · Inorganic Materials

OSTI ID:161859

Arbenina, V V; Daricheva, O E; Pshenichnyi, D A ^[1]

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1. Lomonosov Academy of Fine Chemical Technology, Moscow (Russian Federation)

Doping of A{sup III}B{sup V} compounds with rare earth affects the luminescent and lasing characteristics of epitaxial structures. However, this phenomenon has not been studied adequately, and its nature is the subject of much controversy. In this work, the authors investigated photoluminescence from GaSb epitaxial layers doped with rare earths during growth from tin fluxes and the influence of crystallization temperature and dopant content of the liquid phase on the luminescent characteristics.

• OSTI ID: 161859
• Journal Information: Inorganic Materials, Journal Name: Inorganic Materials Journal Issue: 2 Vol. 31; ISSN 0020-1685; ISSN INOMAF
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL DOPING
CRYSTALLIZATION
GALLIUM ANTIMONIDES
PHOTOLUMINESCENCE
RARE EARTHS