GaAs; GaAlAs ridge waveguide lasers and their monolithic integration using the ion beam etching process

Journal Article · Wed Nov 01 00:00:00 EST 1989 · IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA)

DOI:https://doi.org/10.1109/3.42050· OSTI ID:5365515

Bouadma, N; Correc, P; Brillouet, F P ^[1]

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1. Laboratoire de Bagneux, Centre National d'Etudes des Telecommunications, 92220 Bagneux (FR)

The authors detail the fabrication process of GaAs/GaAlAs ridge waveguide lasers and present their performance characteristics. Threshold currents as low as 8 mA and differential quantum efficiencies as high as 90 percent have been obtained for 250 {mu}m long GRIN-SCH SQW lasers. High-speed short-cavity ridge waveguide lasers for which both the ridge stripe and one mirror facet were formed by Ar-ion beam etching have been achieved. The dependance of threshold current and lasing spectra on the cavity length have been theoretically and experimentally investigated. This process has been successfully used to monolithically integrate a laser diode (LD) with a photodiode (PD) or a field-effect transistor (FET).

• OSTI ID: 5365515
• Journal Information: IEEE (Institute of Electrical and Electronics Engineers) Journal of Quantum Electronics; (USA), Vol. 25:11; ISSN 0018-9197
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM ARSENIDES
STIMULATED EMISSION
GALLIUM ARSENIDES
SEMICONDUCTOR LASERS
FABRICATION
ARGON IONS
CURRENT DENSITY
ETCHING
FIELD EFFECT TRANSISTORS
INTEGRATED CIRCUITS
ION BEAMS
LASER CAVITIES
PERFORMANCE
QUANTUM EFFICIENCY
SEMICONDUCTOR DIODES
WAVEGUIDES
ALUMINIUM COMPOUNDS
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CHARGED PARTICLES
EFFICIENCY
ELECTRONIC CIRCUITS
EMISSION
ENERGY-LEVEL TRANSITIONS
GALLIUM COMPOUNDS
IONS
LASERS
MICROELECTRONIC CIRCUITS
PNICTIDES
SEMICONDUCTOR DEVICES
SOLID STATE LASERS
SURFACE FINISHING
TRANSISTORS
426002* - Engineering- Lasers & Masers- (1990-)
656003 - Condensed Matter Physics- Interactions between Beams & Condensed Matter- (1987-)