Photoelectromagnetic effect in amorphous silicon
The short-circuit current and open-circuit voltage of the photoelectromagnetic effect have been measured at room temperature in discharge-produced amorphous hydrogenated silicon (undoped, n type). From the magnitude and spectral distribution of the effect, the minority (hole) diffusion length and the hole ..mu..tau product are estimated to be 0.09 ..mu..m and 3 x 10/sup -9/ cm/sup 2//v, respectively, while the electron mobility is 5 x 10/sup -2/ cm/sup 2//v sec. From the photoconductivity the electron ..mu..tau product (majority carrier) was 8 x 10/sup -8/ cm/sup 2//v. Derived quantities are then hole mobility 9 x 10/sup -3/ cm/sup 2//v sec, hole lifetime 3 x 10/sup -7/ sec, electron lifetime 1.7 x 10/sup -6/ sec. The sign of the effect is normal. It does not show the inverted sign reported for the Hall effect in the dark.
- Research Organization:
- RCA Laboratories, Princeton, New Jersey 08540
- OSTI ID:
- 5356469
- Journal Information:
- Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:3; ISSN APPLA
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
AMORPHOUS STATE
CHARGE CARRIERS
CHEMICAL REACTIONS
CURRENTS
DATA
DIFFUSION LENGTH
DIRECT ENERGY CONVERTERS
ELECTRIC CONDUCTIVITY
ELECTRIC CURRENTS
ELECTRIC DISCHARGES
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
ELECTROMAGNETISM
ELECTRON MOBILITY
ELEMENTS
EQUIPMENT
FABRICATION
HALL EFFECT
HYDROGENATION
INFORMATION
LIFETIME
MAGNETISM
MATERIALS
MEDIUM TEMPERATURE
MOBILITY
N-TYPE CONDUCTORS
PARTICLE MOBILITY
PHOTOCONDUCTIVITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SILICON
SOLAR CELLS
SOLAR EQUIPMENT
SPECTRA