Electron and hole drift mobility in amorphous silicon

Journal Article · Thu Dec 01 00:00:00 EST 1977 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.89539· OSTI ID:7211196

Moore, A R

Electron and hole drift mobility have been measured in n- and p-type amorphous Si Schottky-barrier solar cells. At room temperature ..mu../sub d n/= (2--5) x 10/sup -2/ cm/sup 2//V sec and ..mu../sub d p/= (5--6) x 10/sup -4/ cm/sup 2//V sec. Both mobilities are trap controlled with ..delta..E=0.19 eV for electrons and ..delta..E=0.35 eV for holes above 250 /sup 0/K and ..delta..E=0.16 and 0.26 eV, respectively, below 250 /sup 0/K. Majority-carrier lifetimes are estimated to be 1 ..mu..sec for electrons and 25 ..mu..sec for holes.

• Research Organization: RCA Laboratories, Princeton, New Jersey 08540
• OSTI ID: 7211196
• Journal Information: Appl. Phys. Lett.; (United States), Vol. 31:11
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
SILICON SOLAR CELLS
CARRIER MOBILITY
SCHOTTKY BARRIER DIODES
AMORPHOUS STATE
CARRIER LIFETIME
EFFICIENCY
ELECTRON DRIFT
ELECTRON MOBILITY
HOLE MOBILITY
RECOMBINATION
SILICON
TRAPS
DIRECT ENERGY CONVERTERS
ELEMENTS
LIFETIME
MOBILITY
PARTICLE MOBILITY
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMIMETALS
SOLAR CELLS
140501* - Solar Energy Conversion- Photovoltaic Conversion