Electrical properties of molecular beam epitaxial GaAs grown at 300-450{degrees}C
- Wright State Univ., Dayton, OH (United States)
- Wright Lab., Wright-Patterson AFB, OH (United States); and others
We use the Hall effect and a new charge-transfer technique to study molecular beam epitaxial GaAs grown at the low substrate temperatures of 300-450{degrees}C. Layers grown from 350-450{degrees}C are semi-insulating (resistivity greater than 10{sup 7}{Omega}-cm), as grown, because of an As{sub Ga}-related donor (not EL2) at E{sub c} - 0.65 eV. The donor concentrations are about 2 x 10{sup 18} cm{sup -3} and 2 x 10{sup 17} cm{sup -3} at growth temperatures of 300 and 400{degrees}C, respectively, and acceptor concentrations are about an order of magnitude lower. Relatively high mobilities ({approximately}5000 cm{sup 2}/V s) along with the high resistivities make this material potentially useful for certain device applications. 8 refs., 2 figs., 2 tabs.
- Sponsoring Organization:
- USDOE
- OSTI ID:
- 535216
- Journal Information:
- Journal of Electronic Materials, Journal Name: Journal of Electronic Materials Journal Issue: 12 Vol. 22; ISSN JECMA5; ISSN 0361-5235
- Country of Publication:
- United States
- Language:
- English
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