Near-field and beam-waist position of the semiconductor laser with a channeled-substrate planar structure

Journal Article · Fri Aug 01 04:00:00 EDT 1980 · Appl. Phys. Lett.; (United States)

DOI:https://doi.org/10.1063/1.91898· OSTI ID:5342756

Chen, C; Wang, S

We demonstrated astigmatism in the output beam from the double-current-confinement channeled-substrate planar laser. A gradual transition from gain guiding toward index guiding is observed as the thickness of the cladding layer t is reduced. The near field is stable, and both the beam width and the beam-waist position are independent of the pumping levels over the range of current tested (up to 3 I/sub th/).

• Research Organization: Department of Electrical Engineering and Computer Sciences and the Electronics Research laboratory, University of California, Berkeley, California 94720
• OSTI ID: 5342756
• Journal Information: Appl. Phys. Lett.; (United States), Journal Name: Appl. Phys. Lett.; (United States) Vol. 37:3; ISSN APPLA
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420300* -- Engineering-- Lasers-- (-1989)
CRYSTAL STRUCTURE
DATA
DIMENSIONS
GAIN
INFORMATION
LASERS
LAYERS
OPTICAL PROPERTIES
OPTICAL SYSTEMS
PHYSICAL PROPERTIES
REFRACTIVITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR LASERS
STABILITY
SUBSTRATES
THICKNESS
WAVEGUIDES