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U.S. Department of Energy
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Feasibility of using copper indium disulfide for high-efficiency, thin-film solar cells. Annual progress report, 1 November 1983-31 January 1985

Technical Report ·
OSTI ID:5330493
This annual technical progress report contains research results on the feasibility of using copper indium disulfide for high-efficiency, thin-film Solar cells, done by Poly Solar Inc. for the Solar Energy Research Institute. Technical approaches consisted of: (1) preparation of the CuInS/sub 2/ source material by direct synthesis; (2) deposition of CuInS/sub 2/ films on conducting and insulating substrates by the close-spacing chemical vapor transport technique; (3) deposition of CuInS/sub 2/ films by other chemical vapor deposition techniques; and (4) the formation and characterization of heterojunction solar cells. Deposition of p-type CuInS/sub 2/ films on graphite, alumina, and coated graphite substrates by the CSCVT technique using iodine and hydrogen iodide as the transport agent was carried out under several conditions. Compositional, structural, and electrical properties of the films were characterized. Heterojunction solar cells were prepared from CuInS/sub 2//graphite using various window materials. CdS/CuInS/sub 2//graphite structures had an open-circuit voltage of 200-250 mV. The short-circuit current density and fill factor were low because of high series resistance. Preliminary work on the preparation of CuInS/sub 2/ films by the sulfurization of Cu-In has also been done. This process shows considerable promise.
Research Organization:
Poly Solar, Inc., Garland, TX (USA)
DOE Contract Number:
AC02-83CH10093
OSTI ID:
5330493
Report Number(s):
SERI/STR-211-2731; ON: DE85012173
Country of Publication:
United States
Language:
English