Chemical vapor deposited copper indium diselenide thin film materials research. Final report, 15 November 1982-14 January 1984

Technical Report · Thu Mar 01 04:00:00 EST 1984

DOI:https://doi.org/10.2172/6980860· OSTI ID:6980860

The objective of the contract is to demonstrate the feasibility of producing device-quality copper indium diselenide films by the close-spacing chemical vapor transport (CSCVT) technique. The technical approaches used in this work consist of (1) the preparation of the CuInSe/sub 2/ source material by direct synthesis and the characterization of its properties, (2) the deposition of CuInSe/sub 2/ films on conducting and insulating substrates by the CSCVT technique, and (3) the formation and characterization of heterojunction solar cells. During the course of this subcontract, a number of copper indium selenide ingots (source material) have been synthesized from the elements, and their structural and electrical properties characterized. The deposition of p-type CuInSe/sub 2/ films on graphite, alumina, and coated graphite substrates by the CSCVT technique using iodine and hydrogen iodide as the transport agent has been carried out under a wide range of conditions. The compositional, structural, and electrical properties of CuInSe/sub 2/ films have been characterized. A number of n-ZnO/p-CuInSe/sub 2/ and n-CdO/p-CuInSe/sub 2/ heterojunction solar cells have been prepared by the deposition of the transparent oxide on p-CuInSe/sub 2/ films by ion-beam sputtering. The AM1 efficiency of these cells is in the range of 2% to 3%.

• Research Organization: Poly Solar, Inc., Garland, TX (USA)
• DOE Contract Number: AC02-83CH10093
• OSTI ID: 6980860
• Report Number(s): SERI/STR-211-2247; ON: DE84004488
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360601 -- Other Materials-- Preparation & Manufacture
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL VAPOR DEPOSITION
COPPER COMPOUNDS
COPPER SELENIDES
CRYSTAL STRUCTURE
DEPOSITION
DIRECT ENERGY CONVERTERS
EFFICIENCY
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
EQUIPMENT
FILMS
HETEROJUNCTIONS
INDIUM COMPOUNDS
INDIUM SELENIDES
JUNCTIONS
MICROSTRUCTURE
PHOTOELECTRIC CELLS
PHOTOVOLTAIC CELLS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR JUNCTIONS
SOLAR CELLS
SOLAR EQUIPMENT
SURFACE COATING
THIN FILMS
TRANSITION ELEMENT COMPOUNDS